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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4060 DESCRIPTION *With TO-247 package *Switching power transistor *High voltage,high speed * PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-247) and symbol DESCRIPTION Absolute maximum ratings(Tc=25) SYMBOL VCBO VCEO VCEX VEBO IC ICM IB IBM PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Base current Base current-Peak Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base VEB=5V Open collector VALUE 600 450 600 7 20 40 7 14 150 150 -55~150 UNIT V V V V A A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 0.83 UNIT /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4060 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL VCEO(SUS) VCEsat VBEsat ICBO ICEO IEBO hFE-1 hFE-2 fT PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current At rated voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency At rated voltage IC=10A ; VCE=5V IC=1mA ; VCE=5V IC=2A ; VCE=10V 10 5 20 MHz 0.1 mA 0.1 mA CONDITIONS IC=0.2A; IB=0 IC=10A ;IB=2A IC=10A ;IB=2A MIN 450 1.0 1.5 TYP. MAX UNIT V V V Switching times resistive load ton ts tf Turn-on time Storage time Fall time IC=10A IB1=2A; IB2=4A VBB2=4V ,RL=15 0.5 2.0 0.2 s s s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4060 Fig.2 Outline dimensions 3 |
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